鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Transition frequency
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
OH
V
OL
R
1
f
T
V
CB
= 鈭?0
V, I
E
=
1 mA, f
=
200 MHz
Conditions
I
C
= 鈭?0 碌A,
I
E
=
0
I
C
= 鈭?
mA, I
B
=
0
V
CB
= 鈭?0
V, I
E
=
0
V
CE
= 鈭?0
V, I
B
=
0
V
EB
= 鈭?
V, I
C
=
0
V
CE
= 鈭?0
V, I
C
= 鈭?
mA
I
C
= 鈭?0
mA, I
B
= 鈭?/div>
0.3 mA
V
CC
= 鈭?
V, V
B
= 鈭?/div>
0.5 V, R
L
=
1 k鈩?/div>
V
CC
= 鈭?
V, V
B
= 鈭?.5
V, R
L
=
1 k鈩?/div>
1
2
3
Min
鈭?0
鈭?0
Typ
Max
Unit
V
V
鈭?/div>
0.1
鈭?/div>
0.5
鈭?/div>
0.01
160
鈭?.9
鈭?/div>
0.2
鈭?0%
10
80
+30%
460
鈭?/div>
0.25
碌A
碌A
mA
錚?/div>
V
V
V
k鈩?/div>
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2004
SJJ00165BED
0.2
鹵0.1
5藲
1
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